DocumentCode
2279590
Title
GaAs buried-channel MESFET analog integrated circuits
Author
Yang, Howard C. ; Canfield, Philip C. ; Allstot, David J.
Author_Institution
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
fYear
1988
fDate
7-9 June 1988
Firstpage
1607
Abstract
GaAs analog integrated circuits have been implemented using a buried-channel MESFET technology. The circuits exhibit higher precision than similar realizations in conventional technology because the frequency dependence of the small-signal parameters is reduced greatly. Higher speed is also achieved since the buried-channel structure allows for 0.25- mu m minimum gate lengths, whereas 0.5- mu m minimum gate lengths must be used in a conventional MESFET process to avoid deleterious short-channel effects.<>
Keywords
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; frequency response; gallium arsenide; linear integrated circuits; 0.25 micron; GaAs; GaAs buried-channel MESFET; analogue integrated circuits; frequency dependence; minimum gate lengths; precision; speed; Analog integrated circuits; Frequency dependence; Gallium arsenide; High speed integrated circuits; Integrated circuit technology; MESFET integrated circuits; Scattering; Silicon; Substrates; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1988., IEEE International Symposium on
Conference_Location
Espoo, Finland
Type
conf
DOI
10.1109/ISCAS.1988.15240
Filename
15240
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