• DocumentCode
    2279755
  • Title

    Ka-band monolithic GaAs PHEMT low noise and driver amplifiers

  • Author

    Chen, T.H.

  • Volume
    1
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    139
  • Abstract
    This paper presents the designs and measurement results of two monolithic microwave integrated circuit (MMIC) amplifiers. The driver amplifier demonstrated a measured gain of 8-11 dB from 9 to 25 GHz with a measured output P1dB of 12 dBm at 13.2 GHz. The LNA shows a linear gain of 28 dB with 3-dB noise figure from 25 to 35 GHz. The MMIC chips are fabricated with a 0.15-μm gate-length pseudomorphic (PM) GaAs-based HEMT MMIC technology carried out by commercially available foundry
  • Keywords
    HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; driver circuits; field effect MMIC; gallium arsenide; 0.15 micron; 13.2 GHz; 25 to 35 GHz; 28 dB; 3 dB; 8 to 11 dB; 9 to 25 GHz; GaAs; Ka-band; PHEMT amplifiers; driver amplifiers; gate-length pseudomorphic HEMT; linear gain; low noise amplifiers; monolithic microwave integrated circuit; Driver circuits; Gain measurement; Gallium arsenide; Integrated circuit measurements; Integrated circuit noise; Low-noise amplifiers; MMICs; Microwave measurements; PHEMTs; Semiconductor device measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific
  • Conference_Location
    Taipei
  • Print_ISBN
    0-7803-7138-0
  • Type

    conf

  • DOI
    10.1109/APMC.2001.985607
  • Filename
    985607
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2279755