• DocumentCode
    2280333
  • Title

    Modeling stress effects on thin oxide growth kinetics

  • Author

    Huang, S.-F. ; Griffin, P.B. ; Plummer, J.D. ; Rissman, P.

  • Author_Institution
    Center for Integrated Syst., Stanford Univ., CA, USA
  • fYear
    1997
  • fDate
    8-10 Sept. 1997
  • Firstpage
    49
  • Lastpage
    52
  • Abstract
    This paper describes the development of a thin oxide growth model, which includes stress dependencies and, hence, allows the modeling of non-planar structures with thin oxides.
  • Keywords
    oxidation; semiconductor process modelling; stress effects; model; nonplanar structure; stress effect; thin oxide growth kinetics; Dielectrics and electrical insulation; Filling; Kinetic theory; Oxidation; Predictive models; Silicon; Temperature; Thermal stresses; Ultra large scale integration; Visualization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
  • Conference_Location
    Cambridge, MA, USA
  • Print_ISBN
    0-7803-3775-1
  • Type

    conf

  • DOI
    10.1109/SISPAD.1997.621333
  • Filename
    621333
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2280333