A silicon pressure sensor with stainless diaphragm for high temperature and chemical application

Author

Terabe, Hiroaki ; Arashima, Hiroaki ; Ura, Noritake ; Suzuki, Kazushi ; Ohta, Kiyoshi ; Ishida, Makota

Author_Institution

Toyoda Machine Works Ltd., Kariya, Japan

Volume

2

fYear

1997

fDate

16-19 Jun 1997

Firstpage

1481

Abstract

This paper shows how to use silicon pressure sensors for high temperature and silicon corrosive environments. A sensor chip has been developed to be used in high temperature up to 300°C, which has SOI (Silicon On Insulator) structure employing Si/Al₂O₃/Si double hetero-epitaxial technology[1]. The sensor chip is covered with a stainless diaphragm, and never contact with media of pressure. In experiments, a pressure sensor which is designed for a range of 1 MPa has a sensitivity of 18.3 mV/V/MPa. After compensating of the temperature influence, a maximum offset error of 1.3%F.S., and a maximum sensitivity error of 1.1%F.S. from 50°C to 200°C were obtained

Keywords

diaphragms; high-temperature techniques; microsensors; pressure sensors; semiconductor epitaxial layers; semiconductor heterojunctions; silicon-on-insulator; 300 C; 50 to 200 C; SOI; Si corrosive environment; Si pressure sensor; Si/Al₂O₃/Si double hetero-epitaxial technology; chemical application; high temperature; offset error; pressure sensor; sensitivity error; sensor chip; stainless diaphragm; temperature influence; Chemical sensors; Chemical technology; Electrodes; Gold; Petroleum; Piezoresistance; Piezoresistive devices; Sensor phenomena and characterization; Silicon on insulator technology; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on

Conference_Location

Chicago, IL

Print_ISBN

0-7803-3829-4

Type

conf

DOI

10.1109/SENSOR.1997.635745

Filename

635745