Calibrated broadband electrical characterization of nanowires

Author

Wallis, T.M. ; Imtiaz, A. ; Nembach, H. ; Bertness, K.A. ; Sanford, N.A. ; Blanchard, P.T. ; Kabos, P.

Author_Institution

Nat. Inst. of Stand. & Technol., Boulder, CO

fYear

2008

fDate

8-13 June 2008

Firstpage

684

Lastpage

685

Abstract

We present a technique for broadband electrical characterization of nanowires up to 40 GHz. The technique relies on established on-wafer, microwave calibration methods as well as direct measurement of the capacitive coupling that is in parallel with the nano-wire admittance. GaN nanowire devices are used to demonstrate the measurement technique and their response is found to depend strongly on the quality of electrical contacts and the geometry of the nanowire network.

Keywords

calibration; nanocontacts; nanoelectronics; nanowires; wide band gap semiconductors; GaN; broadband electrical characterization; capacitive coupling measurement; electrical contacts; frequency 40 GHz; microwave calibration; nanowire admittance; nanowire devices; nanowire network; Admittance measurement; Calibration; Contacts; Gallium nitride; Geometry; Measurement techniques; Microwave devices; Microwave measurements; Microwave theory and techniques; Nanowires;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements Digest, 2008. CPEM 2008. Conference on

Conference_Location

Broomfield, CO

Print_ISBN

978-1-4244-2399-6

Electronic_ISBN

978-1-4244-2400-9

Type

conf

DOI

10.1109/CPEM.2008.4574964

Filename

4574964