Simulation of transient enhanced diffusion of boron induced by silicon self-implantation

Author

Uematsu, M.

Author_Institution

NTT Syst. Electron. Labs., Atsugi, Japan

fYear

1997

fDate

8-10 Sept. 1997

Firstpage

89

Lastpage

92

Abstract

The time, dose, and energy dependence of boron transient enhanced diffusion (TED) induced by silicon self-implantation has been simulated taking into account the time evolution of self-interstitial clusters. The kinetics of cluster dissolution and growth are combined with the kick-out mechanism for boron diffusion, and the decrease in the cluster evolution rate with time is taken into account. Using a unified set of parameters, the simulation explains some complex characteristics of TED; that is, the enhancement is independent of the implant dose at short annealing times, while it increases with increasing implant dose after longer annealing times. In addition, the implant energy dependence of TED can be explained by the proximity of the damage to the surface.

Keywords

annealing; boron; diffusion; doping profiles; elemental semiconductors; interstitials; ion implantation; semiconductor process modelling; silicon; B diffusion; Si:B; annealing time; cluster dissolution kinetics; cluster evolution rate; cluster growth kinetics; dose dependence; energy dependence; implant dose dependence; kick-out mechanism; self-implantation; self-interstitial clusters; simulation; surface damage; time dependence; time evolution; transient enhanced diffusion; Boron; Differential equations; Implants; Ion implantation; Kinetic theory; Laboratories; Partial differential equations; Semiconductor process modeling; Silicon devices; Simulated annealing;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on

Conference_Location

Cambridge, MA, USA

Print_ISBN

0-7803-3775-1

Type

conf

DOI

10.1109/SISPAD.1997.621343

Filename

621343