Study of One Dimension Thickness Scaling on Cu/HfOx/Pt Based RRAM Device Performance

Author

Wang, M. ; Lv, H.B. ; Liu, Q. ; Li, Y.T. ; Xie, H.W. ; Long, S.B. ; Zhang, K.W. ; Liu, X.Y. ; Sun, H.T. ; Yang, X.Y. ; Liu, M.

Author_Institution

Lab. of Nano-Fabrication & Novel Devices Integrated Technol., Inst. of Microelectron., Beijing, China

fYear

2012

fDate

20-23 May 2012

Firstpage

1

Lastpage

3

Abstract

Scaling is a key issue for resistive switching (RS) memory before commercialization. In this paper, for the first time, we reveal the impact of electrode diffusion on the device performance as the thickness of RS material scaling. Serious deterioration of on/off ratio and device yield was observed when the material scaled below 3 nm. A new method of two-step electrode deposition accompanied with re-oxidization process was employed to overcome this problem. Significant improvements of device performance such as low RESET current (~1 μA), high on/off ratio (100x) and 100% device yield were achieved thereafter.

Keywords

copper; electrodes; hafnium compounds; platinum; random-access storage; Cu-HfO_x-Pt; RRAM device performance; RS material scaling; RS memory; current 1 muA; electrode diffusion impact; one dimension thickness scaling; reoxidization process; resistive switching memory; two-step electrode deposition; Electrodes; Films; Hafnium compounds; Performance evaluation; Resistance; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2012 4th IEEE International

Conference_Location

Milan

Print_ISBN

978-1-4673-1079-6

Type

conf

DOI

10.1109/IMW.2012.6213627

Filename

6213627