Stability of silicon microfabricated pull-in voltage references

Author

Rocha, L.A. ; Wolffenbuttel, R.F.

Author_Institution

Dept. for Microelectron., Delft Univ. of Technol., Netherlands

fYear

2002

fDate

16-21 June 2002

Firstpage

172

Lastpage

173

Abstract

Micromechanical structures have been designed, fabricated in silicon and tested for use as on-chip voltage reference. Applications are in electrical metrology and in integrated silicon microsystems. Microbeams of 100 /spl mu/m length, 3 /spl mu/m width and 11 /spl mu/m thickness are electrostatically actuated with a very reproducible pull-in voltage at 9.1 V. Devices demonstrated an initial drift of -12 mV over 10 days and stabilised with a 500 /spl mu/V uncertainty. The temperature coefficient is 1.2 mV/K and the overall noise level is at 100 /spl mu/V (analytical value).

Keywords

elemental semiconductors; measurement standards; micromechanical devices; silicon; voltage measurement; 9.1 V; Si; drift; electrical metrology; electrostatic actuation; integrated silicon microsystem; microbeam; micromechanical structure; noise level; on-chip voltage reference; pull-in voltage; silicon microfabrication; stability; temperature coefficient; uncertainty; Chemical technology; Electrodes; Electrostatics; Metrology; Micromechanical devices; Silicon; Stability; Temperature; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements, 2002. Conference Digest 2002 Conference on

Conference_Location

Ottawa, Ontario, Canada

Print_ISBN

0-7803-7242-5

Type

conf

DOI

10.1109/CPEM.2002.1034775

Filename

1034775