• DocumentCode
    2282328
  • Title

    An Update on Emerging Memory: Progress to 2Xnm

  • Author

    Prall, Kirk ; Ramaswamy, Nirmal ; Kinney, Wayne ; Holtzclaw, Karl ; Chen, Xiaonan ; Strand, Jonathan ; Bez, Roberto

  • Author_Institution
    Micron Technol., Boise, ID, USA
  • fYear
    2012
  • fDate
    20-23 May 2012
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    This paper will give an update on the status of emerging memory (EM) and potential markets. The more popular EM technologies will be reviewed, including PCM, RRAM, and STRAM. The biggest challenges for each technology will be highlighted.
  • Keywords
    random-access storage; EM technology; PCM; RRAM; STRAM; emerging memory; potential markets; Anisotropic magnetoresistance; Heating; Noise; Phase change materials; Random access memory; Resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop (IMW), 2012 4th IEEE International
  • Conference_Location
    Milan
  • Print_ISBN
    978-1-4673-1079-6
  • Type

    conf

  • DOI
    10.1109/IMW.2012.6213635
  • Filename
    6213635
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2282328