Electro-Mechanical Diode Performance and Scaling for Cross-Point Non-Volatile Memory Arrays

The performance and scaling behavior of an electro- mechanical diode non-volatile memory cell design is presented. Prototype electro-mechanical diodes are demonstrated to operate with relatively low set/reset voltages and excellent retention characteristics, and are multi-time programmable. Scaling to sub-20 nm feature size is projected. Due to its simplicity, this new cell design is attractive for implementation of compact (4F2) cross-point memory arrays.