A bulk-JFET and CMOS/SIMOX technology for low noise, high speed charge-sensitive amplifier

Author

Buttler, W. ; Cesura, Giovanni ; Manfredi, Paolo ; Re, V. ; Speziali, V. ; Vogt, Hendrik

Author_Institution

Ingenieur-Buro Buttler, Essen

fYear

1993

fDate

5-7 Oct 1993

Firstpage

186

Lastpage

187

Abstract

Good low-noise and radiation-tolerant behavior has previously been demonstrated for an amplifier design using a bulk JFET-MOS circuit. It is shown in this paper that these advantages and the speed performance are increased using SIMOX technology. A JFET fully compatible with available CMOS/SIMOX technology is used. This JFET requires only a simple modification of the standard process. Using this process extension the good noise performance of JFETs as amplifier input devices can be combined with the high functional density and versatility of MOS in analog and digital switching and storage

Keywords

CMOS integrated circuits; SIMOX; junction gate field effect transistors; preamplifiers; semiconductor device noise; CMOS/SIMOX technology; amplifier input devices; bulk-JFET; high speed charge-sensitive amplifier; low-noise behavior; radiation-tolerant behavior; CMOS technology; DH-HEMTs; Implants; Integrated circuit technology; JFETs; Low-noise amplifiers; MOSFETs; Preamplifiers; Radiation detector circuits; White noise;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1993. Proceedings., 1993 IEEE International

Conference_Location

Palm Springs, CA

Print_ISBN

0-7803-1346-1

Type

conf

DOI

10.1109/SOI.1993.344544

Filename

344544