DocumentCode
2283222
Title
An AFM study of surface morphology of commercial 6" SOI wafers
Author
Neal, Thomas R. ; Karulkar, Pramod C.
Author_Institution
Microelectronics Res. Lab., Columbia, MD, USA
fYear
1993
fDate
5-7 Oct 1993
Firstpage
174
Lastpage
175
Abstract
Work reported in this paper involved an extensive Atomic Force Microscopic investigation of the surface quality of 6" SIMOX SOI wafers without any epitaxy in conjunction with a study of reliability of 19 nm or 9 nm thick gate oxide. The results illustrate that AFM studies will allow rapid development of high quality SOI substrates and that AFM, when used as a quality control tool, will assure supply of quality substrates
Keywords
SIMOX; atomic force microscopy; substrates; surface topography; 6 in; Atomic Force Microscopy; SIMOX SOI wafers; SOI substrates; gate oxide; quality control tool; reliability; surface morphology; Atomic force microscopy; Design for quality; Laboratories; Microelectronics; Rough surfaces; Statistics; Substrates; Surface morphology; Surface roughness; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location
Palm Springs, CA
Print_ISBN
0-7803-1346-1
Type
conf
DOI
10.1109/SOI.1993.344548
Filename
344548
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