Explanation of anomalous narrow width effect for nMOSFET with LOCOS/NSL isolation by compressive stress

Author

Sangku Kim ; Kwangsun Yang ; Junho Baek ; Choonkyung Kim

Author_Institution

TCAD Dept., LG Semicon Co. Ltd., Seoul, South Korea

fYear

1997

fDate

8-10 Sept. 1997

Firstpage

189

Lastpage

191

Abstract

The anomalous threshold voltage characteristics of narrow width nMOSFET fabricated with LOGOS and Nitride Sidewall (NSL) LOCOS isolation is predicted by means of 2D process and 3D device simulation. Isolation structure and encroachment of the channel stop dopant is not sufficient to explain submicron device´s threshold characteristics. The compressive stress which generated during isolation process, enhances dopant-point diffusion. This is one of the factors that explains the threshold voltage characteristics of the submicron device.

Keywords

CMOS integrated circuits; MOSFET; diffusion; integrated circuit modelling; internal stresses; isolation technology; semiconductor device models; semiconductor process modelling; stress effects; 2D process simulation; 3D device simulation; LOCOS/NSL isolation; anomalous narrow width effect; anomalous threshold voltage characteristics; channel stop dopant; compressive stress; dopant-point diffusion; nMOSFET; nitride sidewall LOCOS isolation; submicron device threshold characteristics; Boron; Compressive stress; Doping profiles; Ion implantation; Isolation technology; MOSFET circuits; Predictive models; Random access memory; Thickness measurement; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on

Conference_Location

Cambridge, MA, USA

Print_ISBN

0-7803-3775-1

Type

conf

DOI

10.1109/SISPAD.1997.621369

Filename

621369