Self-heating effects on SOI devices and implication to parameter extraction

Author

Yachou, D. ; Gautier, J. ; Raynaud, C.

Author_Institution

Lab d´´Electron. et de Technol. de l´´Inf., CEA, Centre d´´Etudes Nucleaires de Grenoble, France

fYear

1993

fDate

5-7 Oct 1993

Firstpage

148

Lastpage

149

Abstract

In SOI devices heat dissipation is limited by a buried oxide layer. The consequence is the well known Self Heating (SH) phenomenon. We have analysed in depth the corresponding thermal effects on static and dynamic modes and the implications for the device operation. In this paper the original contributions are the following: decorrelation of temperature effects on the drain current via temperature dependence of mobility and impact ionization generation rate G_ii. This results in a comprehensive explanation of the output conductance attenuation with increasing gate voltage (V_gs). Analysis of displacement current effects, SH and impact ionization on transient device operation. Application to device modeling: proposal of a method for the parameters extraction that takes into account the nonlinear distortion of static output characteristics due to the SH phenomenon. The self-heating analysis, in this paper, is related to a 0.8 μm technology on SIMOX substrate developed by LETI-CEA. The devices are enhancement mode n-channel MOSFETs

Keywords

carrier mobility; impact ionisation; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; silicon; thermal analysis; 0.8 micron; LETI-CEA; SIMOX substrate; SOI devices; Si; buried oxide layer; device modeling; displacement current effects; drain current; enhancement mode; heat dissipation; impact ionization generation rate; mobility; n-channel MOSFETs; nonlinear distortion; output conductance attenuation; parameter extraction; self-heating effects; static output characteristics; temperature dependence; temperature effects; thermal effects; transient device operation; Attenuation; Decorrelation; Heating; Impact ionization; Nonlinear distortion; Parameter extraction; Proposals; Temperature dependence; Transient analysis; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1993. Proceedings., 1993 IEEE International

Conference_Location

Palm Springs, CA

Print_ISBN

0-7803-1346-1

Type

conf

DOI

10.1109/SOI.1993.344557

Filename

344557