DocumentCode
2283726
Title
New concepts of SOI modelling for use in circuit simulator
Author
Lin, J.K. ; Nichols, K.G. ; Redman-White, W.
Author_Institution
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
fYear
1993
fDate
5-7 Oct 1993
Firstpage
92
Lastpage
93
Abstract
In this paper some new concepts, which allow us to solve surface potentials for the two surfaces of the double gate controlled SOI device and to carry out general modelling of the device, are presented. Some simulation results from SPICE3e2 are also demonstrated
Keywords
SPICE; circuit analysis computing; semiconductor device models; semiconductor-insulator boundaries; silicon; surface potential; SOI modelling; SPICE3e2; Si; circuit simulator; double gate controlled SOI device; surface potentials; Bismuth; CMOS digital integrated circuits; Circuit simulation; Computational modeling; Computer science; Computer science education; Control engineering education; Energy consumption; Sun; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1993. Proceedings., 1993 IEEE International
Conference_Location
Palm Springs, CA
Print_ISBN
0-7803-1346-1
Type
conf
DOI
10.1109/SOI.1993.344576
Filename
344576
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