DocumentCode
2283828
Title
Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs
Author
Zhao, Wen-Sheng ; Hu, Jun ; Yin, Wen-Yan
Author_Institution
State Key Lab. of MOI, Zhejiang Univ., Hangzhou, China
fYear
2011
fDate
12-14 Dec. 2011
Firstpage
1
Lastpage
4
Abstract
Sensitivities of through-Si-via (TSV) interconnects to the process parameters are investigated numerically in this paper. Some important parameters of the coupled interconnects are examined and compared in detail, such as silicon conductivity of the substrate and radii of the TSVs, etc., where MOS effects are treated appropriately. The emerging materials, carbon nanotube (CNT) based TSVs are also included and studied.
Keywords
MOS integrated circuits; carbon nanotubes; integrated circuit interconnections; sensitivity analysis; three-dimensional integrated circuits; 3D IC; MOS effects; TSV interconnects; carbon nanotube; sensitivity analysis; through-silicon via interconnects; Capacitance; Conductivity; Educational institutions; Electron devices; Silicon; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2011 IEEE
Conference_Location
Hanzhou
ISSN
2151-1225
Print_ISBN
978-1-4673-2288-1
Electronic_ISBN
2151-1225
Type
conf
DOI
10.1109/EDAPS.2011.6213744
Filename
6213744
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