• DocumentCode
    2284125
  • Title

    Effect of single vs. multiple implant processing on defect types and densities in SIMOX

  • Author

    Venables, D. ; Krause, S.J. ; Park, J.C. ; Lee, J.D. ; Roitman, P.

  • Author_Institution
    Dept. of Chem., Arizona State Univ., Tempe, AZ, USA
  • fYear
    1993
  • fDate
    5-7 Oct 1993
  • Firstpage
    48
  • Lastpage
    49
  • Abstract
    In this paper we describe the origin and characteristics of the defect structures in contemporary SIMOX and show how their densities are controlled by the processing method and conditions
  • Keywords
    SIMOX; dislocation density; ion implantation; semiconductor doping; stacking faults; SIMOX; SOI; defect densities; defect structures; defect types; multiple implant processing; processing method; single implant processing; Annealing; Biological materials; Chemical engineering; Chemical technology; Crystalline materials; Etching; Implants; Power engineering and energy; Silicon; Stacking;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1993. Proceedings., 1993 IEEE International
  • Conference_Location
    Palm Springs, CA
  • Print_ISBN
    0-7803-1346-1
  • Type

    conf

  • DOI
    10.1109/SOI.1993.344598
  • Filename
    344598
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2284125