A new single element phase transition memory

We report a novel phase transition memory (PTM) where we employ electric field and temperature induced phase transition to store, erase and read information within a single electronic element. The devices operate without the need for charge transport through insulator films for charge storage in a floating gate thus avoiding a variety of retention and reliability issues of the conventional floating gate non-volatile memories. The sheet resistance changes in these experiments between two different phases of VO₂ is ~10² Ohm/sq at ~70 °C together with permittivity change. The phase change of VO₂ film causes a threshold voltage shift of ~0.5V in the transistors and capacitors.