• DocumentCode
    2284794
  • Title

    Sub-domain solution of the Boltzmann equation in MOS devices by means of spherical harmonics expansion

  • Author

    Pierantoni, A. ; Vecchi, M.C. ; Gnudi, A.

  • Author_Institution
    Dipt. di Elettronica Inf. e Sistemistica, Bologna Univ., Italy
  • fYear
    1997
  • fDate
    8-10 Sept. 1997
  • Firstpage
    229
  • Lastpage
    232
  • Abstract
    A sub-domain solution technique of the Boltzmann Transport Equation (BTE) based on the Spherical Harmonics Expansion (SHE) method is presented, and applied in the channel region of MOSFETs. It is demonstrated that by means of suitable boundary conditions the "exact" solution is well approximated, with an appreciable increase of numerical efficiency.
  • Keywords
    Boltzmann equation; MOSFET; semiconductor device models; Boltzmann transport equation; MOS device; MOSFET; boundary condition; numerical efficiency; spherical harmonics expansion; sub-domain solution; Boltzmann equation; Boundary conditions; Distribution functions; Electron optics; FETs; MOS devices; Monte Carlo methods; Optical scattering; Phonons; Semiconductor device noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
  • Conference_Location
    Cambridge, MA, USA
  • Print_ISBN
    0-7803-3775-1
  • Type

    conf

  • DOI
    10.1109/SISPAD.1997.621379
  • Filename
    621379
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2284794