Results of the project "Silicon for Mass Unit and Standard" (SIMUS)

Author

Alasia, F. ; Basile, G. ; D´Agostino, G. ; Peuto, A. ; Pettorruso, S. ; Becker, P. ; Bettin, H. ; Kuetgens, U. ; Stuempe, J. ; Valkiers, S. ; Taylor, P. ; De Bievre, P. ; Jensen, L. ; Servidori, M. ; Spirito, P. ; Zeni, L. ; Amato, G. ; Riemann, H. ; Haer

Author_Institution

Ist. di Metrologia "G. Colonnetti", CNR, Torino, Italy

fYear

2002

fDate

16-21 June 2002

Firstpage

558

Lastpage

559

Abstract

The structural and stoichiometric characterisations of silicon crystals are reported to find the origin of a molar volume discrepancy. The target of reproducing this anomaly was achieved and an hypothesis is proposed.

Keywords

crystal growth from vapour; crystal structure; crystals; density; elemental semiconductors; impurities; lattice constants; mass measurement; measurement standards; silicon; units (measurement); vacancies (crystal); voids (solid); SIMUS project; Si; Si crystals; crystal growth; growth conditions; impurity determination; lattice constant; molar volume discrepancy; stoichiometric characterisations; structural characterisations; vacancy concentration determination; voids theory; Atmosphere; Atmospheric measurements; Chemical vapor deposition; Crystals; Density measurement; Deuterium; Lattices; Performance evaluation; Semiconductor materials; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements, 2002. Conference Digest 2002 Conference on

Conference_Location

Ottawa, Ontario, Canada

Print_ISBN

0-7803-7242-5

Type

conf

DOI

10.1109/CPEM.2002.1034969

Filename

1034969