DocumentCode
2285377
Title
Systematic calibration of process simulators for predictive TCAD
Author
Heemyong Park ; Bafleur, Marise ; Borucki, L. ; Sughama, C. ; Zirkle, T. ; Wild, A.
Author_Institution
Motorola Inc., Mesa, AZ, USA
fYear
1997
fDate
8-10 Sept. 1997
Firstpage
273
Lastpage
275
Abstract
This paper demonstrates a methodology for systematic calibration of models in process simulators and its impact on improvement of accuracy and predictive capability of a TCAD system. A software tool for calibration with numerical optimization has been developed and used to calibrate a transient enhanced diffusion (TED) model under low-dose implantation conditions. Using the calibrated model, predictive simulations were performed prior to SIMS measurements. The systematic calibration and its validation through independent experiments showed significantly improved accuracy and predictive capability of process and device simulation system.
Keywords
CAD; calibration; diffusion; electronic engineering computing; ion implantation; semiconductor device models; semiconductor process modelling; CALYPSO; low-dose implantation conditions; model calibration; numerical optimization; predictive TCAD; predictive simulations; process simulator calibration; software tool; Accuracy; Calibration; Computational modeling; Databases; Implants; Performance evaluation; Predictive models; Semiconductor process modeling; Software tools; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
Conference_Location
Cambridge, MA, USA
Print_ISBN
0-7803-3775-1
Type
conf
DOI
10.1109/SISPAD.1997.621390
Filename
621390
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