• DocumentCode
    2285377
  • Title

    Systematic calibration of process simulators for predictive TCAD

  • Author

    Heemyong Park ; Bafleur, Marise ; Borucki, L. ; Sughama, C. ; Zirkle, T. ; Wild, A.

  • Author_Institution
    Motorola Inc., Mesa, AZ, USA
  • fYear
    1997
  • fDate
    8-10 Sept. 1997
  • Firstpage
    273
  • Lastpage
    275
  • Abstract
    This paper demonstrates a methodology for systematic calibration of models in process simulators and its impact on improvement of accuracy and predictive capability of a TCAD system. A software tool for calibration with numerical optimization has been developed and used to calibrate a transient enhanced diffusion (TED) model under low-dose implantation conditions. Using the calibrated model, predictive simulations were performed prior to SIMS measurements. The systematic calibration and its validation through independent experiments showed significantly improved accuracy and predictive capability of process and device simulation system.
  • Keywords
    CAD; calibration; diffusion; electronic engineering computing; ion implantation; semiconductor device models; semiconductor process modelling; CALYPSO; low-dose implantation conditions; model calibration; numerical optimization; predictive TCAD; predictive simulations; process simulator calibration; software tool; Accuracy; Calibration; Computational modeling; Databases; Implants; Performance evaluation; Predictive models; Semiconductor process modeling; Software tools; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on
  • Conference_Location
    Cambridge, MA, USA
  • Print_ISBN
    0-7803-3775-1
  • Type

    conf

  • DOI
    10.1109/SISPAD.1997.621390
  • Filename
    621390