DocumentCode
2287536
Title
Empirical all region current based PHEMT DC model
Author
Gao, Jianjun ; Li, Xiuping ; Wang, Hong ; Boeck, Georg
Author_Institution
Inst. for High-Frequency & Semicond. Syst. Technol., Berlin Univ. of Technol., Germany
Volume
1
fYear
2003
fDate
20-23 Sept. 2003
Firstpage
99
Abstract
This paper proposes an improved PHEMT DC model which covers high and low current applications, as well good agreement is obtained between simulated and measured results for a 0.25(1 × 40) μm double heterostructure PHEMT.
Keywords
equivalent circuits; high electron mobility transistors; microwave field effect transistors; semiconductor device models; PHEMT DC model; Statz model; double heterostructure; empirical all region current based model; equivalent circuits; high current applications; low current applications; simulation; transconductance coefficient; Area measurement; Batteries; Circuit simulation; Gallium arsenide; Intrusion detection; MMICs; PHEMTs; Radiofrequency identification; Threshold voltage; Wireless LAN;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Optoelectronics Conference, 2003. IMOC 2003. Proceedings of the 2003 SBMO/IEEE MTT-S International
Print_ISBN
0-7803-7824-5
Type
conf
DOI
10.1109/IMOC.2003.1244839
Filename
1244839
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