A SiGe BiCMOS Class A power amplifier targeting 5.5GHz application

Author

Qiong, Yan ; Lin, Hua ; Lei, Chen ; Ying, Ruan ; Jie, Su ; Shulin, Zhang ; Wei, Zhang ; Shengfu, Liu ; Zongsheng, Lai

Author_Institution

Inst. of Microelectron. Circuit & Syst., East China Normal Univ., Shanghai, China

fYear

2011

fDate

6-7 Oct. 2011

Firstpage

78

Lastpage

81

Abstract

This paper discusses a 5.5GHz fully integrated high-linearity Class A power amplifier based on 0.18μm SiGe BiCMOS technology. According to the post simulation results, the maximum output power can reach 24.18 dBm, and the PAE is 17.42% at P_1dB. The designed PA based on SiGe BiCMOS technology demonstrates a competive linearity performance compared with RF CMOS and GaAs when considering the factors of cost and process complexity. It can be used in 802.11a Wireless Local Area Network (WLAN) application.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC power amplifiers; circuit complexity; field effect MMIC; integrated circuit design; wireless LAN; BiCMOS class A power amplifier design; IEEE 802.11a; PAE; SiGe; WLAN application; frequency 5.5 GHz; fully integrated high-linearity class A power amplifier; process complexity; size 0.18 mum; wireless local area network application; BiCMOS integrated circuits; CMOS integrated circuits; Gallium arsenide; Heterojunction bipolar transistors; Power amplifiers; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and Electronics (PrimeAsia), 2011 Asia Pacific Conference on Postgraduate Research in

Conference_Location

Macau

ISSN

2159-2144

Print_ISBN

978-1-4577-1608-9

Type

conf

DOI

10.1109/PrimeAsia.2011.6075075

Filename

6075075