• DocumentCode
    2290182
  • Title

    Fast graphene-based electronics and optoelectronics

  • Author

    Avouris, Phaedon

  • Author_Institution
    IBM Res. Div., T.J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    2010
  • fDate
    17-20 Aug. 2010
  • Firstpage
    6
  • Lastpage
    9
  • Abstract
    We discuss the use of monolayer graphene as the channel of RF field-effect transistors (GFETs) and as the photoconductive element of photodetectors. GFETs with cut-off frequencies up to 100 GHz and wide wavelength range, ultrafast photodetectors are demonstrated. The electric field-induced bandgap opening in bilayer graphene is also demonstrated.
  • Keywords
    energy gap; field effect transistors; graphene; monolayers; optoelectronic devices; photodetectors; C; RF field-effect transistors; bilayer graphene; electric field-induced bandgap; fast graphene-based electronics; fast graphene-based optoelectronics; monolayer graphene; photodetector photoconductive element; ultrafast photodetectors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference on
  • Conference_Location
    Seoul
  • ISSN
    1944-9399
  • Print_ISBN
    978-1-4244-7033-4
  • Electronic_ISBN
    1944-9399
  • Type

    conf

  • DOI
    10.1109/NANO.2010.5698060
  • Filename
    5698060
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2290182