Compound semiconductor nanowires for optoelectronic device applications

Author

Gao, Q. ; Joyce, H. ; Paiman, S. ; Kang, J.H. ; Tan, H.H. ; Jackson, H.E. ; Smith, L.M. ; Yarrison-Rice, J.M. ; Zou, Jin ; Jagadish, C.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

fYear

2011

fDate

18-20 May 2011

Firstpage

1

Lastpage

2

Abstract

We review GaAs and InP nanowires and GaAs based nanowire heterostructures grown on (111)B substrates by metal organic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. Transmission electron microscopy, time-resolved photoluminescence and micro-Raman spectroscopy have been used to understand the crystal structure, carrier lifetime and strain effects on the bandgap energy.

Keywords

III-V semiconductors; MOCVD; Raman spectroscopy; carrier lifetime; crystal structure; gallium arsenide; indium compounds; nanowires; optoelectronic devices; photoluminescence; semiconductor quantum wires; transmission electron microscopy; GaAs; InP; bandgap energy; carrier lifetime; compound semiconductor nanowires; crystal structure; metal organic chemical vapor deposition; micro-Raman spectroscopy; nanowire heterostructures; optoelectronic devices; strain effects; time-resolved photoluminescence; transmission electron microscopy; vapor-liquid-solid mechanism; Crystals; Gallium arsenide; Gold; Indium phosphide; Nanowires; Strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Information Photonics (IP), 2011 ICO International Conference on

Conference_Location

Ottawa, ON

Print_ISBN

978-1-61284-315-5

Type

conf

DOI

10.1109/ICO-IP.2011.5953760

Filename

5953760