DocumentCode
2295292
Title
Fast light-emitting silicon-germanium nanostructures for optical interconnects
Author
Lockwood, D.J.
Author_Institution
Inst. for Micro Struct. Sci., Nat. Res. Council, Ottawa, ON, Canada
fYear
2011
fDate
18-20 May 2011
Firstpage
1
Lastpage
2
Abstract
Epitaxially-grown Si/SiGe quantum dot complexes produce efficient photoluminescence and electroluminescence in the desired spectral range of 1.3-1.6 μm. The latest progress in our understanding of the physics of carrier recombination in Si/SiGe nanostructures is reviewed, and a new route toward CMOS compatible light emitters is proposed.
Keywords
Ge-Si alloys; electroluminescence; electron-hole recombination; nanostructured materials; optical interconnections; photoluminescence; semiconductor quantum dots; CMOS compatible light emitters; Si-SiGe; carrier recombination; electroluminescence; epitaxial growth; light-emitting silicon-germanium nanostructures; optical interconnects; photoluminescence; quantum dot complexes; wavelength 1.3 mum to 1.6 mum; CMOS integrated circuits; Radiative recombination; Silicon; Silicon germanium; Three dimensional displays;
fLanguage
English
Publisher
ieee
Conference_Titel
Information Photonics (IP), 2011 ICO International Conference on
Conference_Location
Ottawa, ON
Print_ISBN
978-1-61284-315-5
Type
conf
DOI
10.1109/ICO-IP.2011.5953765
Filename
5953765
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