• DocumentCode
    2295858
  • Title

    Memory circuits for multiple valued logic voltage signals

  • Author

    Current, K.W.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA
  • fYear
    1995
  • fDate
    23-25 May 1995
  • Firstpage
    52
  • Lastpage
    57
  • Abstract
    Voltage-mode CMOS multiple valued logic memory circuits have been realized in a standard 2-micron p-well polysilicon-gate CMOS technology. These circuits requantize multiple-valued logical voltages during a SETUP clock mode and latch the input value during the HOLD clock mode. Using a 5 volt supply and logical voltage increments of 1.67 volts, two similar quaternary memory circuits have worst-case total SETUP and HOLD times of about 5.7 ns and 7 ns; and best single-level transition total SETUP and HOLD times of about 0.9 ns and 1 ns
  • Keywords
    CMOS memory circuits; integrated memory circuits; multivalued logic circuits; HOLD clock mode; SETUP clock mode; memory circuits; multiple valued logic voltage signals; polysilicon-gate CMOS technology; voltage-mode CMOS multiple valued logic memory circuits; CMOS logic circuits; CMOS memory circuits; CMOS technology; Clocks; Latches; Logic circuits; Multivalued logic; Read only memory; Signal processing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Multiple-Valued Logic, 1995. Proceedings., 25th International Symposium on
  • Conference_Location
    Bloomington, IN
  • ISSN
    0195-623X
  • Print_ISBN
    0-8186-7118-1
  • Type

    conf

  • DOI
    10.1109/ISMVL.1995.513509
  • Filename
    513509