A DC-102GHz broadband amplifier in 0.12µm SiGe BiCMOS

Author

Kim, Joohwa ; Buckwalter, James F.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, CA, USA

fYear

2009

fDate

7-9 June 2009

Firstpage

53

Lastpage

56

Abstract

An ultra-wideband amplifier scheme is realized with two cascaded stages that are equalized for high-bandwidth and low gain ripple. The amplifier is implemented in a 0.12 mum SiGe BiCMOS process and achieves a 3 dB bandwidth of 102 GHz. The gain is 10 dB with less than 1.5 dB gain-ripple and group-delay variation under +/- 6 ps over the entire 3 dB bandwidth. The chip occupies an area of 0.29 mm² including the pads and consumes 73 mW from a 2 V supply.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; VHF amplifiers; feedback amplifiers; field effect MIMIC; field effect MMIC; millimetre wave amplifiers; semiconductor materials; wideband amplifiers; BiCMOS; SiGe; UWB; bandwidth 102 GHz; broadband amplifier; frequency 0 GHz to 102 GHz; gain 10 dB; gain-ripple; group-delay variation; power 73 mW; size 0.12 mum; ultrawideband amplifier scheme; voltage 2 V; wideband circuits; Bandwidth; BiCMOS integrated circuits; Broadband amplifiers; Capacitance; Germanium silicon alloys; Integrated circuit technology; Millimeter wave technology; Optical amplifiers; Silicon germanium; Wideband; BiCMOS; SiGe; broadband amplifiers; darlington feedback; traveling wave;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE

Conference_Location

Boston, MA

ISSN

1529-2517

Print_ISBN

978-1-4244-3377-3

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2009.5135488

Filename

5135488