Low-temperature hole mobility in rolled-up Si/SiGe heterostructures

Author

Demarina, N.V. ; Gruetzmacher, D.A.

Author_Institution

Nizhnij Novgorod State Univ., Nizhnij Novgorod

fYear

2008

fDate

12-16 Oct. 2008

Firstpage

91

Lastpage

94

Abstract

We present a theoretical study of the low-field hole mobility in modulation doped scrolled SiGe heterostructures which can be realized from rolled-up strained Si-SiGe films. The simulation of the hole transport along the structure axis is based on a Monte Carlo method and includes hole interaction with phonons and interface roughness at low temperature. We show that the hole mobility is mainly limited by interface roughness scattering and can reach a value of 2times10⁴ cm²/Vs.

Keywords

Ge-Si alloys; Monte Carlo methods; field effect transistors; high electron mobility transistors; interface roughness; semiconductor materials; Monte Carlo method; Si-SiGe; field-effect transistor; interface roughness scattering; low-temperature hole mobility; Capacitive sensors; Charge carriers; Effective mass; Epitaxial layers; Germanium silicon alloys; Lattices; Poisson equations; Scattering; Silicon germanium; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4244-2325-5

Electronic_ISBN

978-1-4244-2326-2

Type

conf

DOI

10.1109/ASDAM.2008.4743367

Filename

4743367