Comprehensive comparative analysis of two types of commonly-used layouts of IGBT packages

Author

Yulin Zhong ; Jinlei Meng ; Puqi Ning ; Dong Zhang ; Xuhui Wen

Author_Institution

Key Lab. of Power Electron. & Electr. Drive, Beijing, China

fYear

2014

fDate

22-25 Oct. 2014

Firstpage

1952

Lastpage

1956

Abstract

A reasonable design of IGBT internal layout is essential to maximize the overall electrical and thermal performance of an IGBT module. For two types of typical layouts of one commonly-used IGBT package with multiple chips connected in parallel, a module-level IGBT equivalent circuit based on chip-level model and accurate interconnection parasitics was constructed in this paper. Comparative simulations have been done to evaluate the advantages and disadvantages of the two types of layouts. The results not only demonstrate the internal electromagnetic & thermal physics which is very hard to be observed in experiments, but also offers a useful guidance for practical application of high power IGBT modules.

Keywords

equivalent circuits; insulated gate bipolar transistors; power bipolar transistors; IGBT internal layout; IGBT module; chip-level model; commonly-used IGBT package; commonly-used layouts; comparative simulations; electrical performance; high-power IGBT modules; interconnection parasitics; internal electromagnetic; module-level IGBT equivalent circuit; thermal performance; thermal physics; Inductance; Insulated gate bipolar transistors; Integrated circuit modeling; Layout; Resistance; Switches; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Machines and Systems (ICEMS), 2014 17th International Conference on

Conference_Location

Hangzhou

Type

conf

DOI

10.1109/ICEMS.2014.7013803

Filename

7013803