A GSM-EDGE power amplifier with a BiFET current limiting bias circuit

Author

De la Rosa, G. ; Osika, D. ; Scheinberg, N.

Author_Institution

ANADIGICS Inc., Warren, NJ, USA

fYear

2009

fDate

7-9 June 2009

Firstpage

595

Lastpage

598

Abstract

A dual mode BiFET GSM-EDGE Power amplifier with built in current limiting circuitry is presented. The amplifier incorporates a bias circuit on the power stage that limits the base current of the HBT cells thus limiting the collector current to a predetermined level of 2.1 Amps. This novel scheme increases the ruggedness of the power amplifier when subjected to high mismatch conditions while maintaining matched load GMSK PAE and EDGE linearity. The amplifier operates in the 850/900 band, with a 3.6 V supply, and it exhibits an output power of 35 dBm with a PAE of 55% for GMSK mode. In EDGE mode, it exhibits an output power of 29.5 dBm with 25% PAE and an ORFS of -60 dBc at +/-400 KHz offsets.

Keywords

cellular radio; current limiters; field effect transistors; minimum shift keying; power amplifiers; EDGE linearity; Enhanced Data rates for Global Evolution; GSM-EDGE power amplifier; Global System for Mobile communications; base current; collector current; current limiting bias circuit; dual mode BiFET; matched load GMSK PAE; mismatch conditions; voltage 3.6 V; Circuits; Current limiters; GSM; Heterojunction bipolar transistors; High power amplifiers; Linearity; PHEMTs; Power amplifiers; Power generation; Resistors; BiFET; Bias circuits; Current limiting; EDGE; GSM; HBT; PHEMT; Power Amplifier; Ruggedness;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2009. RFIC 2009. IEEE

Conference_Location

Boston, MA

ISSN

1529-2517

Print_ISBN

978-1-4244-3377-3

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2009.5135612

Filename

5135612