DocumentCode
2300094
Title
Charge-compensated high gain InAs avalanche photodiodes
Author
Sun, Wenlu ; Lu, Zhiwen ; Zheng, Xiaoguang ; Campbell, J.C. ; Maddox, Scott J. ; Nair, Hari P. ; Bank, Seth R.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
fYear
2012
fDate
23-27 Sept. 2012
Firstpage
169
Lastpage
170
Abstract
We report an InAs avalanche photodiode with graded p-doping to compensate the n-type background doping in the depletion region. The measured gain, excess noise, and bandwidth are consistent with Monte Carlo simulation.
Keywords
III-V semiconductors; Monte Carlo methods; avalanche photodiodes; indium compounds; semiconductor device noise; semiconductor doping; InAs; Monte Carlo simulation; charge compensated high gain avalanche photodiodes; depletion region; excess noise; graded p-doping; n-type background doping; Avalanche photodiodes; Bandwidth; Current measurement; Gain measurement; Monte Carlo methods; Noise; Noise measurement; Avalanche photodiode; Monte Carlo simulation; excess noise; gain-bandwidth product;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2012 IEEE
Conference_Location
Burlingame, CA
Print_ISBN
978-1-4577-0731-5
Type
conf
DOI
10.1109/IPCon.2012.6358544
Filename
6358544
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