DocumentCode
2300097
Title
Polarization-dependent photocurrent enhancement in metamaterial-integrated quantum dot infrared detectors
Author
Sharma, Yagya D. ; Jun, Young Chul ; Kim, Jun Oh ; Brener, Igal ; Krishna, Sanjay
Author_Institution
Dept. of ECE, Univ. of New Mexico, Albuquerque, NM, USA
fYear
2012
fDate
23-27 Sept. 2012
Firstpage
171
Lastpage
172
Abstract
We present the design, fabrication, and characterization of quantum dots-in-a-well infrared detectors integrated with a planar metamaterial layer. The resonantly excited metamaterial layer provides strongly enhanced optical fields and the increased photocurrent is obtained at the metamaterial resonant frequency.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; integrated optics; metamaterials; optical design techniques; optical fabrication; photoconductivity; photoemission; semiconductor quantum dots; semiconductor quantum wells; InGaAs; integrated optics; metamaterial resonant frequency; optical design; optical fabrication; planar metamaterial layer; polarization-dependent photocurrent enhancement; quantum dot-in-a-well infrared detectors; Arrays; Infrared detectors; Metamaterials; Photoconductivity; Quantum dots; Resonant frequency; Semiconductor device measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2012 IEEE
Conference_Location
Burlingame, CA
Print_ISBN
978-1-4577-0731-5
Type
conf
DOI
10.1109/IPCon.2012.6358545
Filename
6358545
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