• DocumentCode
    2300840
  • Title

    Electro-mechanically induced GHz rate optical frequency modulation in silicon

  • Author

    Tallur, Siddharth ; Bhave, Sunil A.

  • Author_Institution
    OxideMEMS Lab., Cornell Univ., Ithaca, NY, USA
  • fYear
    2012
  • fDate
    23-27 Sept. 2012
  • Firstpage
    258
  • Lastpage
    259
  • Abstract
    We present a monolithic silicon acousto-optic frequency modulator (AOFM) operating at 1.09GHz. Employing mechanical levers to enhance displacement of the optical resonator enables an optical frequency modulation index of 0.067.
  • Keywords
    acousto-optical modulation; elemental semiconductors; frequency modulation; optical resonators; silicon; Si; acousto-optic frequency modulator; electro-mechanically induced GHz rate; frequency 1.09 GHz; mechanical levers; monolithic silicon; optical frequency modulation; optical resonator; Amplitude modulation; Frequency modulation; Optical modulation; Optical pumping; Optical resonators; Resonant frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2012 IEEE
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    978-1-4577-0731-5
  • Type

    conf

  • DOI
    10.1109/IPCon.2012.6358590
  • Filename
    6358590
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2300840