An ultra-wideband GaAs pHEMT driver amplifier for fiber optic communications at 40 Gb/s and beyond

Author

Heins, M.S. ; Carroll, I.M. ; Kao, M.-Y. ; Steinbeiser, C.F. ; Landon, T.R. ; Campbell, C.F.

Author_Institution

TriQuint Semicond., Dallas, TX, USA

fYear

2002

fDate

17-22 Mar 2002

Firstpage

273

Lastpage

274

Abstract

We have developed a GaAs pHEMT amplifier IC that can drive 40 Gb/s modulators requiring 4 V signals. The excellent amplitude flatness and phase linearity is exhibited both in small-signal S-parameter and in-fixture eye pattern measurements. The 78 GHz 3-dB bandwidth will drive the development of systems with bit-rates higher than 40 Gb/s and modulation formats such as RZ which require electrical components with very high bandwidths.

Keywords

HEMT integrated circuits; S-parameters; broadband networks; electro-optical modulation; gallium arsenide; integrated optoelectronics; optical communication equipment; 4 V; 40 Gbit/s; 78 GHz; GaAs; GaAs pHEMT amplifier IC; Gb/s modulators; RZ modulation formats; amplitude flatness; electrical components; fiber optic communication; in-fixture eye pattern measurements; phase linearity; small-signal S-parameter; ultra-wideband GaAs pHEMT driver amplifier; very high bandwidths; Bandwidth; Driver circuits; Gallium arsenide; Linearity; Optical amplifiers; Optical fiber amplifiers; Optical fiber communication; PHEMTs; Semiconductor optical amplifiers; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication Conference and Exhibit, 2002. OFC 2002

Print_ISBN

1-55752-701-6

Type

conf

DOI

10.1109/OFC.2002.1036356

Filename

1036356