Performance and reliability of high-mobility Si0.55Ge0.45 p-channel FinFETs based on epitaxial cladding of Si Fins

Author

Mertens, Hans ; Ritzenthaler, R. ; Hikavyy, Andriy ; Franco, Jacopo ; Lee, Jae W. ; Brunco, D.P. ; Eneman, Geert ; Witters, L. ; Mitard, J. ; Kubicek, S. ; Devriendt, Katia ; Tsvetanova, Diana ; Milenin, A.P. ; Vrancken, C. ; Geypen, J. ; Bender, Hugo ; G

Author_Institution

imec, Leuven, Belgium

fYear

2014

fDate

9-12 June 2014

Firstpage

1

Lastpage

2

Abstract

We present a comprehensive study of Si_0.55Ge_0.45-cladded p-channel FinFETs, including a comparison with planar SiGe quantum-well devices. The SiGe-cladded FinFETs exhibit ~2× higher hole mobility, ~2× better I_ON/I_OFF, and improved DIBL compared to Si control devices. Superior NBTI reliability over equivalent Si FinFETs is demonstrated for cladding thicknesses down to 3 nm. The dependencies of drive current and hole mobility on both SiGe thickness and device width are examined in detail. This analysis shows that SiGe thickness conformality and epitaxial facet control are crucial for the optimization of SiGe-cladded FinFETs.

Keywords

Ge-Si alloys; MOSFET; hole mobility; negative bias temperature instability; semiconductor device reliability; NBTI reliability; Si_0.55Ge_0.45; cladding thickness; device width; drive current; epitaxial cladding; epitaxial facet control; high-mobility p-channel FinFET; hole mobility; planar quantum-well devices; Epitaxial growth; FinFETs; Logic gates; Semiconductor device reliability; Silicon; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4799-3331-0

Type

conf

DOI

10.1109/VLSIT.2014.6894360

Filename

6894360