III–V CMOS devices and circuits with high-quality atomic-layer-epitaxial La2O3/GaAs interface

Author

Dong, Lixin ; Wang, X.W. ; Zhang, J.Y. ; Li, X.F. ; Lou, X.B. ; Conrad, N. ; Wu, Huwei ; Gordon, Roy G. ; Ye, Peide D.

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

fYear

2014

fDate

9-12 June 2014

Firstpage

1

Lastpage

2

Abstract

By realizing a high-quality epitaxial La₂O₃/ GaAs(111)A interface, we demonstrate GaAs CMOS devices and integrated circuits including nMOSFETs, pMOSFETs, CMOS inverters, NAND and NOR logic gates and five-stage ring oscillators for the first time. As an exercise of III-V CMOS circuits on a common substrate with a common gate dielectric, it provides a route to realize ultimate high-mobility CMOS on Si if long-time expected breakthroughs of III-V epi-growth on Si occur.

Keywords

CMOS integrated circuits; III-V semiconductors; MOSFET; atomic layer epitaxial growth; gallium arsenide; invertors; lanthanum compounds; logic gates; CMOS inverters; GaAs CMOS devices; III-V CMOS circuits; III-V CMOS devices; III-V epi-growth; La₂O₃-GaAs; NAND logic gates; NOR logic gates; common gate dielectric; common substrate; five-stage ring oscillators; high-quality atomic-layer-epitaxial interface; nMOSFET; pMOSFET; CMOS integrated circuits; Epitaxial growth; Gallium arsenide; Inverters; Logic gates; MOSFET; MOSFET circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4799-3331-0

Type

conf

DOI

10.1109/VLSIT.2014.6894361

Filename

6894361