DocumentCode
2303628
Title
Patterned InGaAs/InGaAsP/InP quantum dot active lasers using diblock copolymer lithography and selective area MOCVD growth
Author
Mawst, L.J. ; Kuech, T.F.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Wisconsin - Madison, Madison, WI, USA
fYear
2010
fDate
7-11 Nov. 2010
Firstpage
359
Lastpage
360
Abstract
Diblock copolymer nanopatterning and selective growth is implemented for realizing quantum dot active region lasers on InP substrates. The quantum dot active region is found to be sensitive to the temperature ramping prior to the cladding layer regrowth.
Keywords
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; nanofabrication; nanolithography; nanopatterning; nanophotonics; quantum dot lasers; semiconductor growth; InGaAs-InGaAsP-InP; cladding layer regrowth; diblock copolymer lithography; diblock copolymer nanopatterning; patterned quantum dot active lasers; selective area MOCVD growth;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location
Denver, CO
ISSN
-
Print_ISBN
978-1-4244-5368-9
Electronic_ISBN
-
Type
conf
DOI
10.1109/PHOTONICS.2010.5698908
Filename
5698908
Link To Document