DocumentCode
2303984
Title
Enablement of Variation-Aware Timing: Treatment of Parasitic Resistance and Capacitance
Author
Lu, Ning ; McCullen, Judy H.
Author_Institution
Syst. & Technol. Group, IBM Semicond. Res. & Dev. Center, Essex Junction, VT
fYear
2007
fDate
26-28 March 2007
Firstpage
743
Lastpage
748
Abstract
We describe our enablement of variation-aware timing for ASIC circuits at the 90 nm CMOS technology node. In particular, we focus on the enablement of statistical process variations in parasitic resistance and capacitance at the Spice model level, which is an industry first. Traditional layout-to-Spice-netlist parasitic extraction (PEX) tools create resistor elements and capacitor elements with fixed values for parasitic resistance (R) and capacitance (C) in interconnect and in circuits. As such, the statistical variations in parasitic R and C are lost. Our enablement suite, which includes both a layout-to-Spice-netlist PEX tool and Spice models, supports not only the nominal values of parasitic R and C, but also provides the lower and upper bounds of parasitic R and C. More importantly, these lower and upper bounds and their nominal R and C values are in the same netlist, so that the continuous skewing of parasitic R and C is enabled. This is our first innovation. Our second innovation is to enable the Monte Carlo simulations of parasitic R and C. Our third innovation is to distinguish parasitic R and C from different interconnect levels or from poly, diffusion, substrate, and provides an independent skewing parameter for each metal level, via level, poly, diffusion, substrate, etc. We also explain how to do skewing/corner modeling for parasitic R and C
Keywords
CMOS integrated circuits; Monte Carlo methods; SPICE; application specific integrated circuits; integrated circuit interconnections; integrated circuit modelling; statistical analysis; 90 nm; ASIC circuits; CMOS technology; Monte Carlo simulations; Spice model level; capacitor elements; layout-to-Spice-netlist parasitic extraction tools; parasitic capacitance; parasitic resistance; resistor elements; statistical process variations; variation-aware timing; Application specific integrated circuits; CMOS technology; Capacitors; Integrated circuit interconnections; Parasitic capacitance; Resistors; Semiconductor device modeling; Technological innovation; Timing; Upper bound;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality Electronic Design, 2007. ISQED '07. 8th International Symposium on
Conference_Location
San Jose, CA
Print_ISBN
0-7695-2795-7
Type
conf
DOI
10.1109/ISQED.2007.71
Filename
4149123
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