DocumentCode
230412
Title
Device-level PBTI-induced timing jitter increase in circuit-speed random logic operation
Author
Lu, J.W. ; Vaz, C. ; Campbell, J.P. ; Ryan, J.T. ; Cheung, K.P. ; Jiao, G.F. ; Bersuker, Gennadi ; Young, Chadwin D.
Author_Institution
Semicond. & Dimensional Metrol. Div., NIST, Gaithersburg, MD, USA
fYear
2014
fDate
9-12 June 2014
Firstpage
1
Lastpage
2
Abstract
We utilize eye-diagram measurements of timing jitter to investigate the impact of PBTI in devices subject to DC as well as ring oscillator (RO) and pseudo-random binary sequence (PRBS) stress waveforms. We observe that RO measurements miss the relevant random timing jitter increases which are well captured using PRBS measurements. We also observe that DC, RO, and PRBS stresses all introduce similar increases in random timing jitter. This calls into question the widely assumed degradation headroom between DC and AC measurements. This work collectively provides a snapshot of PBTI degradation in “real” circuit environments. It provides a path for more accurate and realistic circuit lifetime estimations and circuit timing budget criteria.
Keywords
binary sequences; integrated circuit design; integrated circuit measurement; logic design; negative bias temperature instability; random sequences; timing jitter; AC measurements; DC measurements; PBTI degradation; PRBS measurements; PRBS stress waveforms; RO measurements; circuit lifetime estimation; circuit timing budget criteria; circuit-speed random logic operation; device-level PBTI-induced timing jitter; eye-diagram measurements; pseudo-random binary sequence; random timing jitter; ring oscillator; Degradation; Logic gates; Stress; Stress measurement; Time measurement; Timing jitter;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
Conference_Location
Honolulu, HI
ISSN
0743-1562
Print_ISBN
978-1-4799-3331-0
Type
conf
DOI
10.1109/VLSIT.2014.6894387
Filename
6894387
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