• DocumentCode
    2305198
  • Title

    Individually-addressed planar nanoscale InGaN-based light emitters

  • Author

    Massoubre, D. ; Edwards, P.R. ; Xie, E. ; Richardson, E. ; Watson, I.M. ; Gu, E. ; Martin, R.W. ; Dawson, M.D.

  • Author_Institution
    Inst. of Photonics, Univ. of Strathclyde, Glasgow, UK
  • fYear
    2012
  • fDate
    23-27 Sept. 2012
  • Firstpage
    754
  • Lastpage
    755
  • Abstract
    We report on a new fabrication approach to create individually-addressable InGaN-based nanoscale-LEDs. It is based on the creation by LEEBI of a spatially confined sub-micron-size charge injection path within the p-GaN of an LED structure.
  • Keywords
    III-V semiconductors; gallium compounds; light emitting diodes; nanophotonics; InGaN; LED; LEEBI; charge injection path; light emitting diodes; planar nanoscale light emitters; Apertures; Electron beams; Fabrication; Gallium nitride; Light emitting diodes; Nanoscale devices; Standards;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2012 IEEE
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    978-1-4577-0731-5
  • Type

    conf

  • DOI
    10.1109/IPCon.2012.6358842
  • Filename
    6358842
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2305198