DocumentCode
2305297
Title
Silicon-Germanium multi-quantum wells for extended functionality and lower cost integration
Author
Onbasli, M. Cengiz ; Yesilyurt, Alper ; Yu, Hyun Yong ; Nayfeh, Ammar M. ; Okyay, Ali K.
Author_Institution
Dept. of Mater. Sci. & Eng., Massachusetts Inst. of Technol., Boston, MA, USA
fYear
2010
fDate
7-11 Nov. 2010
Firstpage
530
Lastpage
531
Abstract
Silicon-Germanium quantum wells were grown in p-i-n layers using a recently developed epitaxial technique. Nanostructural characterization (TEM, XPS, photoluminescence) indicates low-dislocation density, high quality films. Solar cells made of these layers have low leakage current.
Keywords
X-ray photoelectron spectra; dislocation density; elemental semiconductors; epitaxial growth; germanium; leakage currents; photoluminescence; semiconductor growth; semiconductor quantum wells; silicon; solar cells; transmission electron microscopy; Si-Ge; TEM; XPS; dislocation density; epitaxial technique; extended functionality; leakage current; lower cost integration; multiquantum wells; nanostructural characterization; p-i-n layers; photoluminescence; solar cells;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location
Denver, CO
ISSN
-
Print_ISBN
978-1-4244-5368-9
Electronic_ISBN
-
Type
conf
DOI
10.1109/PHOTONICS.2010.5698995
Filename
5698995
Link To Document