Development of transient liquid phase soldering process for LSI die-bonding

Author

Izuta, Goro ; Abe, Shunichi ; Hirota, Jitsuho ; Hayashi, Osamu ; Hoshinouchi, Susumu

Author_Institution

Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1993

fDate

1-4 Jun 1993

Firstpage

1012

Lastpage

1016

Abstract

For high-power semiconductor devices with Cu lead-frames in plastic packages, die-bonding process that can obtain a heat-resistant bond (with high melting point) without large residual stress has been developed by applying transient liquid-phase bonding to the soldering process. A three-layered solder sheet the inner layer of which is 95Pb-5Sn solder and the surface layers of which are Pb-Sn eutectic solder is used as the bonding material. The bonding temperature is about 460 K so as to melt only eutectic layers. The eutectic layers are isothermally solidified and the melting point of the bond rises to over 520 K by a two-hour heat treatment at the bonding temperature. As a result, a heat-resistant bond can be obtained whose residual stress can be reduced by more than 1/2 by a low-temperature process

Keywords

integrated circuit technology; large scale integration; lead alloys; microassembling; soldering; tin alloys; 460 K; 520 K; 95Pb-5Sn solder; Cu; Cu lead-frames; LSI die-bonding; Pb-Sn; Pb-Sn eutectic solder; heat-resistant bond; high-power semiconductor devices; low-temperature process; melting point; plastic packages; residual stress; transient liquid phase soldering process; Bonding; Large scale integration; Lead compounds; Plastic packaging; Residual stresses; Semiconductor device packaging; Semiconductor devices; Soldering; Surface treatment; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 1993. Proceedings., 43rd

Conference_Location

Orlando, FL

Print_ISBN

0-7803-0794-1

Type

conf

DOI

10.1109/ECTC.1993.346728

Filename

346728