Evaluation of radiation tolerance of silicon dioxide layer for field emitter arrays

Author

Gotoh, Yusuke ; Tsuji, Hiroyuki ; Yoshizawa, Shingo ; Nagao, Masaru ; Akiyoshi, Masanori ; Takgai, Ikuji

Author_Institution

Dept. of Electron. Sci. & Eng., Kyoto Univ., Kyoto, Japan

fYear

2014

fDate

6-10 July 2014

Firstpage

71

Lastpage

72

Abstract

Current-voltage characteristics of silicon dioxide layer prepared by chemical vapor deposition with TEOS, which is used as an insulting layer for field emitter arrays, were investigated with and without a MeV ion irradiation, in order to demonstrate high radiation tolerance. Sandwich structures with niobium electrodes and silicon dioxide layers were irradiated by a 2 MeV helium ion beam with the diameter of 1 mm to the ion dose of 0.05 mC. It was found that no significant deterioration of insulating properties of the samples.

Keywords

chemical vapour deposition; electrodes; field emitter arrays; ion beam effects; ion beams; niobium; sandwich structures; silicon compounds; MeV ion irradiation; Nb; SiO₂; TEOS; chemical vapor deposition; current-voltage characteristics; electron volt energy 2 MeV; field emitter arrays; helium ion beam; insulting layer; niobium electrodes; radiation tolerance; sandwich structures; silicon dioxide layer; size 1 mm; Arrays; Current measurement; Electrodes; Insulators; Performance evaluation; Radiation effects; field emitter array; radiation torelance; silicon dioxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2014 27th International

Conference_Location

Engelberg

Print_ISBN

978-1-4799-5306-6

Type

conf

DOI

10.1109/IVNC.2014.6894764

Filename

6894764