Si tip arrays with ultra-narrow nanoscale charge transfer channel

We report a featured device structure of Si tip with ultra-narrow nanoscale charge transfer channel. The nano-channel, as a resistance, was integrated with individual tips to form the hourglass-like structures. Two-terminal current-voltage tests were performed. The result shows that 10-nm-difference in diameter (70 to 80 nm) of the nano-channel can cause a resistance change of two order in magnitude. We propose that the electronegative nano-channel surface with dangling bonds (surface state) may take the account for the effect.