Electron emission GaN-AlGaN microwave transit-time diode

Author

Evtukh, A. ; Goncharuk, N. ; Litovchenko, V. ; Karushkin, N. ; Yilmazoglu, Oktay ; Hartnagel, H. ; Mimura, Hidenori

Author_Institution

V. Lashkaryov Inst. of Semicond. Phys., Kiev, Ukraine

fYear

2014

fDate

6-10 July 2014

Firstpage

88

Lastpage

89

Abstract

Microwave impedance of a diode based on electron emission GaN micro-cathode with AlGaN single-layer coating and electron transit in vacuum is studied. The investigations have indicated negative conductance (NC) of the diode in terahertz frequency range. The NC takes place when resonant electron emission occurs through double barrier quantum structure (DBQS) formed by cathode potential profile at certain electric field and parameters of AlGaN layer. Dependence of the NC spectrum on cathode coating parameters is investigated.

Keywords

III-V semiconductors; aluminium compounds; electron emission; gallium compounds; microwave diodes; transit time devices; vacuum microelectronics; wide band gap semiconductors; GaN-AlGaN; cathode potential profile; double barrier quantum structure; electron emission microwave transit time diode; electron transit; microwave impedance; negative conductance; resonant electron emission; single layer coating; terahertz frequency range; Cathodes; Gallium nitride; emission and transit delay; gallium nitride cathode; negative conductance; resonant electron emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2014 27th International

Conference_Location

Engelberg

Print_ISBN

978-1-4799-5306-6

Type

conf

DOI

10.1109/IVNC.2014.6894771

Filename

6894771