40 GHz passively mode-locked semiconductor lasers with a novel structure

Author

Nishimura, T. ; Nomura, Y. ; Akiyama, K. ; Tomita, N. ; Isu, T.

Author_Institution

Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Hyogo, Japan

fYear

2002

fDate

17-22 Mar 2002

Firstpage

703

Lastpage

705

Abstract

We have presented a mode-locked semiconductor laser that operates at a 40 GHz repetition rate and in a 1.55 μm band. The mode-locked pulses have a nearly transform-limited time-bandwidth product of 0.38. The phase differences between oscillating modes were calculated and the results account for the transform-limited pulse generation. The reduction of phase difference was achieved by replacing a part of the gain region by passive waveguides in the cavity. The understanding and realization of such mode-locking operations will help us to make stable mode-locking semiconductor lasers that are applicable in long-haul optical communication systems.

Keywords

laser cavity resonators; laser mode locking; laser modes; laser stability; optical pulse generation; optical transmitters; semiconductor lasers; waveguide lasers; 1.55 micron; GHz repetition rate; gain region; laser cavity; long haul optical communication; mode-locked pulses; mode-locked semiconductor laser; nearly transform-limited time-bandwidth product; oscillating modes; passive waveguides; stable mode-locking semiconductor lasers; transform-limited pulse generation; Bragg gratings; Fiber gratings; Fiber lasers; Laser mode locking; Laser stability; Power conversion; Power generation; Pump lasers; Semiconductor lasers; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication Conference and Exhibit, 2002. OFC 2002

Print_ISBN

1-55752-701-6

Type

conf

DOI

10.1109/OFC.2002.1036661

Filename

1036661