• DocumentCode
    2307025
  • Title

    Bonding induced stress in semiconductor laser

  • Author

    Varma, R.R. ; Parayanthal, P.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • fYear
    1993
  • fDate
    1-4 Jun 1993
  • Firstpage
    482
  • Lastpage
    484
  • Abstract
    The TM mode in a semiconductor laser is often associated with tensile stress and therefore the laser fabrication processes are optimized so that the active waveguide layer is in compression. Our experiments suggest that hard solder such as AuSn induces compressive stress in the laser chip which is dependent on the process and the submount material. Using a thermal expansion model we have calculated the stress in the laser chip for various submount materials
  • Keywords
    internal stresses; optical workshop techniques; semiconductor lasers; semiconductor technology; soldering; thermal expansion; AuSn; TM mode; active waveguide layer; bonding; compressive stress; hard solder; laser chip; laser fabrication; semiconductor laser; submount material; tensile stress; thermal expansion model; Bonding; Compressive stress; Laser modes; Optical device fabrication; Optical materials; Semiconductor lasers; Semiconductor waveguides; Tensile stress; Thermal stresses; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference, 1993. Proceedings., 43rd
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    0-7803-0794-1
  • Type

    conf

  • DOI
    10.1109/ECTC.1993.346802
  • Filename
    346802