DocumentCode
2307025
Title
Bonding induced stress in semiconductor laser
Author
Varma, R.R. ; Parayanthal, P.
Author_Institution
AT&T Bell Labs., Murray Hill, NJ, USA
fYear
1993
fDate
1-4 Jun 1993
Firstpage
482
Lastpage
484
Abstract
The TM mode in a semiconductor laser is often associated with tensile stress and therefore the laser fabrication processes are optimized so that the active waveguide layer is in compression. Our experiments suggest that hard solder such as AuSn induces compressive stress in the laser chip which is dependent on the process and the submount material. Using a thermal expansion model we have calculated the stress in the laser chip for various submount materials
Keywords
internal stresses; optical workshop techniques; semiconductor lasers; semiconductor technology; soldering; thermal expansion; AuSn; TM mode; active waveguide layer; bonding; compressive stress; hard solder; laser chip; laser fabrication; semiconductor laser; submount material; tensile stress; thermal expansion model; Bonding; Compressive stress; Laser modes; Optical device fabrication; Optical materials; Semiconductor lasers; Semiconductor waveguides; Tensile stress; Thermal stresses; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference, 1993. Proceedings., 43rd
Conference_Location
Orlando, FL
Print_ISBN
0-7803-0794-1
Type
conf
DOI
10.1109/ECTC.1993.346802
Filename
346802
Link To Document