DocumentCode
2308571
Title
Design and characterization of MMIC active cold loads
Author
Buhles, P.M. ; Lardizabal, S.M.
Author_Institution
Dept. of Electr. Eng., Massachusetts Univ., Amherst, MA, USA
Volume
1
fYear
2000
fDate
11-16 June 2000
Firstpage
29
Abstract
This paper reports the first broadband monolithic microwave integrated circuit (MMIC) active cold loads. The fabricated loads demonstrate state-of-the-art temperatures of 90 K over the 2-10 GHz range and 125 K over the 10-26 GHz range. The MMICs were fabricated on 100 micron GaAs substrates using 0.15 micron GaAs Metamorphic HEMT technology. In addition, contemporary topologies for cold load design have been evaluated.
Keywords
HEMT integrated circuits; III-V semiconductors; cryogenic electronics; field effect MMIC; gallium arsenide; integrated circuit design; 0.15 micron; 125 K; 2 to 26 GHz; 90 K; GaAs; GaAs MHEMT; GaAs metamorphic HEMT technology; GaAs substrates; MMIC active cold loads; broadband type; characterization; cold load design; contemporary topologies; monolithic microwave integrated circuit; Calibration; Circuit topology; Costs; Feedback; Gallium arsenide; HEMTs; MMICs; Microwave radiometry; Temperature distribution; mHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Print_ISBN
0-7803-5687-X
Type
conf
DOI
10.1109/MWSYM.2000.860878
Filename
860878
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