Tunneling conductivity of superlattice GaAs/AlGaAs n-i-p solar cells by means of the generalized Kubo-Greenwood formula and the Green´s function

Author

Varonides, A.C.

Author_Institution

Dept. of Phys. & Electron. Eng., Scranton Univ., PA, USA

fYear

1993

fDate

10-14 May 1993

Firstpage

696

Lastpage

699

Abstract

The author derives, from first principles, an explicit result for the perpendicular conductivity of superlattice solar cells by means of the generalized Kubo-Greenwood formulas and the Green´s function. The advantage of superlattice based solar cells, when compared to their bulk counterparts is that quantization of energy levels takes place within the quantum wells leading to enhancement of conductivity. These energy levels form minibands that allow the carriers to tunnel through the barriers

Keywords

Green´s function methods; III-V semiconductors; aluminium compounds; electrical conductivity of crystalline semiconductors and insulators; gallium arsenide; semiconductor device models; semiconductor quantum wells; semiconductor superlattices; solar cells; tunnelling; GaAs-AlGaAs; Green´s function; Kubo-Greenwood formula; energy levels quantisation; perpendicular conductivity; quantum wells; superlattice GaAs/AlGaAs n-i-p solar cells; tunneling conductivity; Conducting materials; Conductivity; Energy states; Gallium arsenide; Green´s function methods; Photovoltaic cells; Physics; Quantization; Semiconductor superlattices; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE

Conference_Location

Louisville, KY

Print_ISBN

0-7803-1220-1

Type

conf

DOI

10.1109/PVSC.1993.347007

Filename

347007